新的读出模式为了闪存芯片位错误有大的计算.
Modern flash chips have more complicated architecture than previous generations. It contain cells which has been produced with the help of the latest technical process and they have denser structure than before. Using TLC architecture, manufacturers can produced cheaper NAND flash chips and increase its capacity. The other side of this way is significant deterioration of quality of NAND flash structures and cells. It also influences on wear level and make it worse than in common Single- or Double level cells. In such cases, the power of ECC and active verification mode is not enough for fixing the most part of errors, and new Readout mode will help to compare the power of ECC codes and multiple readout of each page in NAND flash. It means that readout will be preformed at the same time, when software tries to performed ECC correction. This mode is very effective and it will help to get the best result of NAND chips.
现代的闪存芯片比前几代更复杂的架构。它包含与最新的技术工艺的帮助下产生的单元，这些单元有致密结构超过之前的。使用TLC的架构，制造商可以生产更便宜的NAND闪存芯片，并提高其容量。这种方式的另一面是NAND闪存结构和单元质量的显着恶化。它也影响耐久性标准,使情况变得更糟比常见的单层或双层单元。在这种情况下，ECC和起作用的校验模式是不足够的用于修理大部分的错误，新的读出模式将有助于比较ECC代码和多个读出的NAND闪存中的每个页面的能力。这意味着，读出将被预先在相同的时间，当软件试图执行ECC纠正。这种模式是非常有效的，这将有助于获得闪存芯片的最好结果.
This mode could be performed using the map and allow to read data only from those pages which have failed ECC correction.
这种模式下，能够执行使用地图和允许读取数据只能从那些有ECC修正失败的页。
Readout mode could be launched from the “Map” menu on any preparation result.
读出模式能启动从这个地图菜单在任何准备结果.
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